Breakthrough Silicon Electro-Optic Platform Achieves 100+ GHz Bandwidth for Next-Gen Optical Communications

Researchers at the Leibniz-Institute for High Performance Microelectronics (IHP) have achieved a major milestone in silicon photonics by developing a monolithic electro-optic platform capable of bandwidths exceeding 100 GHz. This innovative platform integrates ultra-fast germanium-silicon (Ge-Si) electro-absorption modulators operating at over 110 GHz and fin photodiodes with bandwidths surpassing 200 GHz directly onto silicon, paving the way for next-generation optical communication systems.

The integration of these high-speed components on a single silicon chip addresses the growing demand for faster and more efficient data transmission in applications such as 6G wireless, data centers, and high-performance computing. By leveraging mature silicon CMOS fabrication processes, the platform ensures scalability, cost-effectiveness, and compatibility with existing electronic infrastructure.

This technological breakthrough enables unprecedented data rates and signal integrity, supporting the evolution of optical interconnects and networks. The platform's monolithic design minimizes signal loss and latency, offering significant advantages over traditional hybrid integration methods. As the world moves toward higher bandwidth requirements, this research sets a new benchmark for the future of silicon photonics and optical communications.

References:

• Alsaedi, W. K. et al. Spectrum options and allocations for 6G: a regulatory and standardization review. IEEE Open J. Commun. Soc. 4, 1787–1812 (2023).
• Ghelfi, P. et al. [Further references truncated for brevity]